The Vlasov model for solid state and real structure of the crystal

Volume 3, Issue 1, February 2018     |     PP. 1-12      |     PDF (352 K)    |     Pub. Date: January 7, 2018
DOI:    400 Downloads     7222 Views  

Author(s)

V. I. Talanin, Department of Computer Science & Software Engineering, Institute of economics & information technologies, Kiyashko Street, 16b, Zaporozhye, 69015 Ukraine
I. E. Talanin, Department of Computer Science & Software Engineering, Institute of economics & information technologies, Kiyashko Street, 16b, Zaporozhye, 69015 Ukraine
V.I. Lashko, Department of Computer Science & Software Engineering, Institute of economics & information technologies, Kiyashko Street, 16b, Zaporozhye, 69015 Ukraine

Abstract
Questions of application of the Vlasov model for solid state for description of the nucleation of defect structure, taking into account of the thermal conditions of the crystal growth were discussed. The Vlasov model for solid state describes the processes of complexation during the growth of real crystals adequately classical theory of nucleation and growth of second-phase particles in solids. With the help of the Vlasov model for solid state shown that during of low-temperature treatments of crystals the complexation is unlikely. In this case we have the processes of coalescence of grown-in defects. Method of calculation of the initial defect structure of crystals was proposed. This method includes the Vlasov model for solid state and the classical theory of nucleation and growth of second-phase particles in solids.

Keywords
grown-in microdefectssiliconsolids structure

Cite this paper
V. I. Talanin, I. E. Talanin, V.I. Lashko, The Vlasov model for solid state and real structure of the crystal , SCIREA Journal of Chemistry. Volume 3, Issue 1, February 2018 | PP. 1-12.

References

[ 1 ] M. Born and K. Huang, Dynamical theory of crystal lattices (Clarendon Press, Oxford, 1954).
[ 2 ] J.W. Cristian, The theory of transformations in metals and alloys (Pergamon Press, London, 1965).
[ 3 ] V.I. Talanin, and I.E. Talanin, Physics of the Solid State, 58, 427 (2016).
[ 4 ] V.I. Talanin, and I.E. Talanin, Formation of grown-in microdefects in dislocation-free silicon monocrystals, in: Thomas B. Elliot (Ed.), New Research on Semiconductors, Nova Sci. Publ., Inc. New York, 2006.
[ 5 ] V.I. Talanin, and I.E. Talanin, Physics of the Solid State, 52, 2063 (2010).
[ 6 ] A.A. Vlasov, Journal of Physics, 9, 130 (1945).
[ 7 ] A.A. Vlasov, Nonlocal Statistical mechanics (Nauka, Moscow, 1978).
[ 8 ] V.V. Kozlov, Russian Math. Surveys, 63, 691 (2008).
[ 9 ] A.A. Vlasov, Many-particle theory and its application to plasma (Gordon & Breach, New York, 1961).
[ 10 ] V.I. Talanin, and I.E. Talanin, Physics of the Solid State, 58, 2050 (2016).
[ 11 ] V.V. Vedenyapin, Boltzmann and Vlasov kinetic equations (Fizmatlit, Moscow, 2001).
[ 12 ] E.M. Lifshitz, and L.P. Pitaevskii, Physical Kinetics (Pergamon Press, Oxford, 1981).
[ 13 ] V.I. Talanin, and I.E. Talanin, Physics of the Solid State, 53, 119 (2011).
[ 14 ] V.V. Slezov, and V.V. Sagalovich, Usp. Fiz. Nauk, 151, 67 (1987).
[ 15 ] J. Vanhellemont, J. Appl. Phys., 78, 4297 (1995).