28.68% (29.87%)- New Limiting Highest Efficiencies obtained in \mathbf{n}^+(\mathbf{p}^+)-\mathbf{p}(\mathbf{n})\ Crystalline Silicon (Si) Junction Solar Cells at T=300 K, Due to The Effects of Heavy (Low) Doping and Impurity Size

Volume 7, Issue 5, October 2022     |     PP. 160-179      |     PDF (1349 K)    |     Pub. Date: September 22, 2022
DOI: 10.54647/physics14489    95 Downloads     4574 Views  

Author(s)

H. Van Cong, Université de Perpignan Via Domitia, Laboratoire de Mathématiques et Physique (LAMPS), EA 4217, Département de Physique, 52, Avenue Paul Alduy, F-66 860 Perpignan, France.
K. C. Ho-Huynh Thi, Groupe de Physique Théorique, 20 Rue du Col de LLi, F-66100 Perpignan, France.
R. Brouzet, Université de Perpignan Via Domitia, Laboratoire de Mathématiques et Physique (LAMPS), EA 4217, Département de Physique, 52, Avenue Paul Alduy, F-66 860 Perpignan, France.
P. Blaise, Université de Perpignan Via Domitia, Laboratoire de Mathématiques et Physique (LAMPS), EA 4217, Département de Physique, 52, Avenue Paul Alduy, F-66 860 Perpignan, France.
B. Zeghmati, Université de Perpignan Via Domitia, Laboratoire de Mathématiques et Physique (LAMPS), EA 4217, Département de Physique, 52, Avenue Paul Alduy, F-66 860 Perpignan, France.

Abstract
In the n^+(p^+)-p(n) crystalline Si-junction solar cells, by basing on a same treatment method, and for a same heavy (low) doping effect, as those given in our recent paper (RP) [1], but using now a new expression, obtained for the relative dielectric constant \varepsilon\left(r_{d\left(a\right)}\right), determined exactly in the effective Bohr model, as that given in Eq. (1c), representing the donor (acceptor) d(a)-radius r_{d\left(a\right)}-effect or the \varepsilon\left(r_{d\left(a\right)}\right)-effect, suggesting further that, for an increasing r_{d\left(a\right)}, \varepsilon\left(r_{d\left(a\right)}\right) decreases, as showed in Table 1, according to the increase in photovoltaic efficiency η, as observed in Tables 2 and 3, we finally get in our present paper, for highest values of r_{d\left(a\right)}, the new limiting highest efficiencies, η=28.68% (29.87%)<\eta_{RP}=31% (30.65%), being due to r_{d\left(a\right)}\ [8]\varepsilon_{RP}(r_{d(a)}), \varepsilon_{RP}(r_{d(a)})\ being our inaccurate and simple formula, proposed in RP, and also reported in Eq. (1d), for a comparison. Finally, our new limiting highest efficiencies, η=28.68% (29.87%), can also be compared with other limiting \eta-results, such as: 29.43% [26], 30%[6], and \mathbf{31}%\ [3, 4].

Keywords
donor (acceptor)-size effect; heavily doped emitter region; photovoltaic conversion factor; open circuit voltage; photovoltaic conversion efficiency

Cite this paper
H. Van Cong, K. C. Ho-Huynh Thi, R. Brouzet, P. Blaise, B. Zeghmati, 28.68% (29.87%)- New Limiting Highest Efficiencies obtained in \mathbf{n}^+(\mathbf{p}^+)-\mathbf{p}(\mathbf{n})\ Crystalline Silicon (Si) Junction Solar Cells at T=300 K, Due to The Effects of Heavy (Low) Doping and Impurity Size , SCIREA Journal of Physics. Volume 7, Issue 5, October 2022 | PP. 160-179. 10.54647/physics14489

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