*33.01% (31.06%)- Limiting Highest Efficiencies obtained in \mathbf{n}^+(\mathbf{p}^+)-\mathbf{p}(\mathbf{n})\ Crystalline Silicon Junction Solar Cells at T=300 K, Due to The Effects of Heavy (Low) Doping and Impurity Size*

**DOI:**10.54647/physics14465 95 Downloads 3147 Views

**Author(s)**

**Abstract**

In our recent two works [1, 2], by basing on: (1) the effects of heavy(light) doping and donor (acceptor), d(a), size , which affect the total carrier-minority saturation current density J_{oI(II)}\equivJ_{En(p)o}+J_{Bp(n)o},\ J_{En(p)o}(J_{Bp(n)o}),\ being injected respectively into the heavily doped donor (acceptor)-Si emitter-lightly doped acceptor (donor)-Si base regions, HD[d(a)-Si]ER-LD[a(d)-Si]BR, of n^+(p^+)-p(n) junction solar cells, respectively, (2) an effective Gaussian donor-density profile to determine J_{En(p)o}, and (3) the use of two experimental points, we investigated the photovoltaic conversion factor n_{I(II)}, short circuit current density J_{scI(II)}, fill factor F_{I(II)}, and finally efficiency \eta_{I(II)}. Further, we obtained the highest maximal values of \eta_{I(II)}, \eta_{I(II)-max.}=31.55%\ (27.56%), being due to the taken large values of d(a)-radius, r_{d(a)}=0.163 (0.141) nm, which do not correspond to the of r_{S(Tl)}-radius, r_{S(Tl)}=0.10(0.19)\ nm\ [8], for the\ emitter\ thickness W=85\ \mu m and surface recombination\ velocity \ S ={10}^{-50}\ cm/s, for example, corresponding to the completely opaque COER, given in the COHD[d(a)-Si]ER, and for a low Tl(S)-acceptor(donor) density N_{a(d)}={10}^{16}{\rm cm}^{-3}, taken in the LD[a(d)-Si]BR, respectively.

In the present work, by basing on such a treatment method, but using now the usual physical conditions such as: W=15\ \mu m,{\ N}_{Bi(In)}={5\times10}^{20}\ {\rm cm}^{-3}\ and\ S\ =100\ (cm/s\ ), according to the highly transparent HD[Bi(In)-Si]ER-case, and then N_{In(Bi)}=5\times{10}^{18}{\rm cm}^{-3} for LD[In(Bi)-Si]BR, with r_{Bi(In)}=0.160(0.135)\ nm [8], we now get: \eta_{I(II)-max.}=31% (30.65%), respectively, which can be compared with the result \mathbf{\eta} =31% for W=15\ \mu m and S\ =100\ (cm/s\ ),obtained recently by Bhattacharya and John, using the numerical simulation method [3, 4].

**Keywords**

Donor (acceptor)-size effect; heavily doped emitter region; photovoltaic conversion factor; open circuit voltage; photovoltaic conversion efficiency

**Cite this paper**

H. Van Cong, K. C. Ho-Huynh Thi, P. Blaise, O. Henri-Rousseau, R. Brouzet, J. Sulian, M. Cayrol,
33.01% (31.06%)- Limiting Highest Efficiencies obtained in \mathbf{n}^+(\mathbf{p}^+)-\mathbf{p}(\mathbf{n})\ Crystalline Silicon Junction Solar Cells at T=300 K, Due to The Effects of Heavy (Low) Doping and Impurity Size
, *SCIREA Journal of Physics*.
Volume 7, Issue 3, June 2022 | PP. 80-103.
10.54647/physics14465

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