29.58% (31.26)% -Limiting Highest Efficiencies obtained in the \mathbf{n}^+(\mathbf{p}^+)-\mathbf{p}(\mathbf{n})\ Crystalline InP Junction Solar Cells at T=300 K, Due to The Effects of Heavy (Low) Doping and Impurity Size

Volume 7, Issue 5, October 2022     |     PP. 200-220      |     PDF (1340 K)    |     Pub. Date: October 23, 2022
DOI: 10.54647/physics14491    69 Downloads     1962 Views  

Author(s)

H. Van Cong, Université de Perpignan Via Domitia, Laboratoire de Mathématiques et Physique (LAMPS), EA 4217, Département de Physique, 52, Avenue Paul Alduy, F-66 860 Perpignan, France.
K. C. Ho-Huynh Thi, Université de Perpignan Via Domitia, Laboratoire de Mathématiques et Physique (LAMPS), EA 4217, Département de Physique, 52, Avenue Paul Alduy, F-66 860 Perpignan, France.
C. T. Huynh-Pivet, Université de Perpignan Via Domitia, Laboratoire de Mathématiques et Physique (LAMPS), EA 4217, Département de Physique, 52, Avenue Paul Alduy, F-66 860 Perpignan, France.
A. Pivet, Université de Perpignan Via Domitia, Laboratoire de Mathématiques et Physique (LAMPS), EA 4217, Département de Physique, 52, Avenue Paul Alduy, F-66 860 Perpignan, France.
C. V. Huynh, Université de Perpignan Via Domitia, Laboratoire de Mathématiques et Physique (LAMPS), EA 4217, Département de Physique, 52, Avenue Paul Alduy, F-66 860 Perpignan, France.
A. L. Pivet, Université de Perpignan Via Domitia, Laboratoire de Mathématiques et Physique (LAMPS), EA 4217, Département de Physique, 52, Avenue Paul Alduy, F-66 860 Perpignan, France.
I. Pivet, Université de Perpignan Via Domitia, Laboratoire de Mathématiques et Physique (LAMPS), EA 4217, Département de Physique, 52, Avenue Paul Alduy, F-66 860 Perpignan, France.

Abstract
In the n^+(p^+)-p(n) crystalline InP-junction solar cells, by basing on a same treatment method, and for a same heavy (low) doping effect, as those investigate in our recent papers [1, 2], but using now a new expression, obtained for the static relative dielectric constant \varepsilon\left(r_{d\left(a\right)}\right), determined exactly in the effective Bohr model, as that given in Eq. (1c), representing the donor (acceptor) d(a)-radius r_{d\left(a\right)}-effect, or the \varepsilon\left(r_{d\left(a\right)}\right)-effect, suggesting further that, for an increasing r_{d\left(a\right)}, \varepsilon\left(r_{d\left(a\right)}\right) decreases, as showed in Table 1, according to the increase in photovoltaic efficiency η, as that observed in Tables 2 and 3, we finally get, in our present paper, for highest values of r_{d\left(a\right)}, the limiting highest efficiency results of such n^+(p^+)-p(n) crystalline InP-junction solar cells, η=29.58% (31.26%), respectively.Furthermore, one notes that our present value: η=31.26% can also be compared with the corresponding one, η=30.6%, investigated by Raj et al. [4], using a p-i-ZnO sample.

Keywords
donor (acceptor)-size effect; heavily doped emitter region; photovoltaic conversion factor; open circuit voltage; photovoltaic conversion efficiency

Cite this paper
H. Van Cong, K. C. Ho-Huynh Thi, C. T. Huynh-Pivet, A. Pivet, C. V. Huynh, A. L. Pivet, I. Pivet, 29.58% (31.26)% -Limiting Highest Efficiencies obtained in the \mathbf{n}^+(\mathbf{p}^+)-\mathbf{p}(\mathbf{n})\ Crystalline InP Junction Solar Cells at T=300 K, Due to The Effects of Heavy (Low) Doping and Impurity Size , SCIREA Journal of Physics. Volume 7, Issue 5, October 2022 | PP. 200-220. 10.54647/physics14491

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