The impact of electron irradiation on the electrical properties of n-Ge single crystals

Volume 4, Issue 1, February 2019     |     PP. 1-7      |     PDF (239 K)    |     Pub. Date: March 20, 2019
DOI:    354 Downloads     4062 Views  


S.V. Luniov, Lutsk National Technical University,75 Lvivska Str., Lutsk 43018, Ukraine.
A.I. Zimych, Lutsk National Technical University,75 Lvivska Str., Lutsk 43018, Ukraine.
P. F. Nazarchuk, Lutsk National Technical University,75 Lvivska Str., Lutsk 43018, Ukraine.
V.Т. Maslyuk, Institute of electron physics NAS of Ukraine, 21 Universitetska Str., Uzhghorod 88017, Ukraine.
O.V. Burban, Volyn college of National University for Food Technologies, 6 Kafedralna Str., Lutsk 43016, Ukraine.

The effect of electron irradiation with the energy of 10 MeV on the electrical properties of n-Ge single crystals is investigated. Based on measurements of the Hall effect, the temperature dependences of the resistivity, concentration and mobility of current carriers for the range of 180–280 K have been obtained. It was shown that for the irradiation doses Ω<1016 el./cm2, germanium did not change the type of conductivity, and at doses Ω>2 1016 el./cm2, it was converting in p-type. The obtained experimental data show that, in contrast to γ-irradiated n-Ge single crystals, the new carrier scattering mechanisms affect the temperature changes of resistivity (along with the change at the temperature of the concentration of current carriers). Due to the high thermal sensitivity, germanium single crystals, irradiated by the electrons can be promising materials for the construction on their basis of the thermistors. The effect of radiation-stimulated increase of the effective mobility of current carriers for germanium single crystals is obtained, which is explained by the formation in the volume of single crystal during electron irradiation of high-conductivity inclusions. This effect is important for the creation on the basis of germanium, which was additionally subjected to the radiation processing by the electron beam, high-speed electronic devices for micro- and nanoelectronics.

irradiated germanium, temperature dependence of resistivity, scattering mechanisms, thermal sensitivity, high-conductivity inclusions.

Cite this paper
S.V. Luniov, A.I. Zimych, P. F. Nazarchuk, V.Т. Maslyuk, O.V. Burban, The impact of electron irradiation on the electrical properties of n-Ge single crystals , SCIREA Journal of Physics. Volume 4, Issue 1, February 2019 | PP. 1-7.


[ 1 ] Kasap, Safa, and Peter Capper, eds. Springer handbook of electronic and photonic materials. (Springer, 2017).
[ 2 ] Schroder, Dieter K. Semiconductor material and device characterization (John Wiley & Sons, 2006).
[ 3 ] E. A. Lomtev, P. G. Mikhaylov, A. U. Analieva, A. O. Sazonov, Multifunctional sensors of physical quantities. Principles, models and designs studied the principles of multifunctional sensors (MFS) physical quantities. Measurement. Monitoring. Management. Control, 12 (2) 57–64 (2015).
[ 4 ] Y. Sun, A. G. Chmielewski, Applications of Ionizing Radiation in Materials Processing. (Warszawa : Institute of Nuclear Chemistry and Technology, 2017).
[ 5 ] Quanfeng, Li, et al., Irradiation of semiconductor devices using a 10 MeV travelling wave electron linear accelerator. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 174 (1-2) 194-198 (2001).
[ 6 ] C. Claeys, E. Simoen, Radiation Effects in Advanced Semiconductor Materials and Devices (Springer-Verlag Berlin Heidelberg, 2002).
[ 7 ] Luniov, S. V., et al., Determination of parameters of radiation defects in single crystal n-Ge irradiated by high-energy electrons.  Nuclear Physics and Atomic Energy 17 (1) 47-52 (2016).
[ 8 ] Luniov, S. V., and O. V. Burban, Constants of Electron-Phonon Interaction for Optical and Intervalley Phonons in n-Ge. Journal of Nano-and Electronic Physics  6 (1) 1020-1 (2014).
[ 9 ] A.K. Semeniuk, Radiation Effects in Multivalley Semiconductors (Nadstyr’ya: Lutsk, 2001).
[ 10 ] Fage-Pedersen, J., A. Nylandsted Larsen, and A. Mesli, Irradiation-induced defects in Ge studied by transient spectroscopies. Physical review B 62 (15) 10116 (2000).
[ 11 ] Luniov, S. V., et al., The impact of radiation defects on the mechanisms of electron scattering in single crystals n-Ge. Journal of physical studies. 19 (4) 4704-4710 (2015).
[ 12 ] E.N. Vologdin, A.P. Lysenko, Integral radiation changes of the parameters of semiconductor materials (MGIEM, Moscow, 1998).