Effects of heavy doping and impurity size on minoritycarrier transport parameters in heavily (lightly) n(p)type crystalline silicon at 300K, applied to determine the performance of n^+p junction solar cells, by H. Van Cong, P. Blaise, and O. HenriRousseau
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Author(s)
H. Van Cong, Université de Perpignan Via Domitia, Laboratoire de Mathématiques et Physique (LAMPS), EA 4217, Département de Physique, 52, Avenue Paul Alduy, F66 860 Perpignan, France
P. Blaise, Université de Perpignan Via Domitia, Laboratoire de Mathématiques et Physique (LAMPS), EA 4217, Département de Physique, 52, Avenue Paul Alduy, F66 860 Perpignan, France
O. HenriRousseau, Université de Perpignan Via Domitia, Laboratoire de Mathématiques et Physique (LAMPS), EA 4217, Département de Physique, 52, Avenue Paul Alduy, F66 860 Perpignan, France
Abstract
The effects of heavy doping and donor (acceptor) size on the hole (electron)minority saturation current density J_Eo (J_Bo ), injected respectively into the heavily (lightly) doped crystalline silicon (Si) emitter (base) region of n^+p junction, which can be applied to determine the performance of solar cells, being strongly affected by the dark saturation current density: J_o≡J_Eo+J_Bo, were investigated. For that, we used an effective Gaussian donordensity profile to determine J_Eo, and an empirical method of two points to investigate the ideality factor n, short circuit current density J_sc, fill factor (FF), and photovoltaic conversion efficiency η, expressed as functions of the open circuit voltage V_oc, giving rise to a satisfactory description of our obtained results, being compared also with other existing theoreticalandexperimental ones. So, in the completely transparent and heavily doped (PSi) emitter region, CTHD(PSi)ER, our obtained J_Eoresults were accurate within 1.78%. This accurate expression for J_Eo is thus imperative for continuing the performance improvement of solar cell systems. For example, in the physical conditions (PCs) of CTHD (PSi) ER and of lightly doped (BSi) base region, LD(BSi)BR, we obtained the precisions of the order of 8.1% for J_sc, 7.1% for FF, and 5% for η, suggesting thus an accuracy of J_Bo (≤8.1%). Further, in the PCs of completely opaque and heavily doped (SSi) emitter region, COHD(SSi)ER, and of lightly doped (acceptorSi) base region, LD(acceptorSi)BR, our limiting ηresults are equal to: 27.77%,…, 31.55%, according to the E_givalues equal to: 1.12eV ,…, 1.34eV, given in various (B,…, Tl)Si base regions, respectively, being due to the acceptorsize effect. Furthermore, in the PCs of CTHD (donorSi) ER and of LD(TlSi)BR, our maximal ηvalues are equal to: 24.28%,…, 31.51%, according to the E_givalues equal to: 1.11eV ,…, 1.70eV , given in various (Sb,…, S)Si emitter regions, respectively, being due to the donorsize effect. It should be noted that these obtained highest ηvalues are found to be almost equal, as: 31.51%≃31.55%, coming from the fact that the two obtained limiting J_ovalues are almost the same.
Keywords
donor (acceptor)size effect; heavily doped emitter region; ideality factor; open circuit voltage; photovoltaic conversion efficiency
Cite this paper
H. Van Cong,
P. Blaise,
O. HenriRousseau,
Effects of heavy doping and impurity size on minoritycarrier transport parameters in heavily (lightly) n(p)type crystalline silicon at 300K, applied to determine the performance of n^+p junction solar cells, by H. Van Cong, P. Blaise, and O. HenriRousseau, SCIREA Journal of Physics (ISSN:27068862). Vol.
4
, No.
4
,
2019
, pp.
63

110
.
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