Volume 1, Number 2 (2016)
Year Launched: 2016
Journal Menu
Archive
Previous Issues
Why Us
-  Open Access
-  Peer-reviewed
-  Rapid publication
-  Lifetime hosting
-  Free indexing service
-  Free promotion service
-  More citations
-  Search engine friendly
Contact Us
Email:   service@scirea.org
Home > Journals > SCIREA Journal of Energy > Archive > Paper Information

Effect of POCl3 bubbler temperature on solar cells emitter characteristics

Volume 1, Issue 2, December 2016    |    PP. 60-70    |PDF (529 K)|    Pub. Date: December 20, 2016
200 Downloads     908 Views  

Author(s)
A. El Amrani, Research Center in Semiconductor Technology for Energetic (CRTSE) 02 Bd. Frantz Fanon – Alger, BP N°140, Les 07 Merveilles, 16038 – Algiers – Algeria
Y. Boudiaf, Research Center in Semiconductor Technology for Energetic (CRTSE) 02 Bd. Frantz Fanon – Alger, BP N°140, Les 07 Merveilles, 16038 – Algiers – Algeria
A. Saibi, Research Center in Semiconductor Technology for Energetic (CRTSE) 02 Bd. Frantz Fanon – Alger, BP N°140, Les 07 Merveilles, 16038 – Algiers – Algeria
L. Mahiou, Research Center in Semiconductor Technology for Energetic (CRTSE) 02 Bd. Frantz Fanon – Alger, BP N°140, Les 07 Merveilles, 16038 – Algiers – Algeria

Abstract
The effect of POCl3 bubbler temperature on silicon n+/p solar cells emitter characteristics is investigated in this paper. By increasing the bubbler temperature, calculations and secondary ion mass spectroscopy characterization showed that the amount of phosphorus entering the diffusion tube has significantly increased. On the contrary, emitter sheet resistances remain constant. This was confirmed and explained by emitters depth profiling of the electrically active phosphorus. Besides that, the minority carrier lifetime measured by means of Quasi-Steady-State Photoconductance technique decreased indicating that the excess of phosphorus deposited on emitter surface degrades the emitter electrical performance. The same trend has been observed for the implied open circuit voltage. It decreased from 632 mV at 15°C to 602 mV at 26°C. In conclusion, we have shown that the temperature of the POCl3 bubbler is also an important parameter that controls the emitter properties.

Keywords
Silicon, Diffusion, POCl3.

Cite this paper
A. El Amrani, Y. Boudiaf, A. Saibi, L. Mahiou, Effect of POCl3 bubbler temperature on solar cells emitter characteristics, SCIREA Journal of Energy. Vol. 1 , No. 2 , 2016 , pp. 60 - 70 .

References

[ 1 ] D. Nobili, A. Armigliato, M. Finetti and S. Solmi, J. Appl. Phys. 53(3), 1484 (1982).
[ 2 ] S. Solmi, D. Nobili, J. Appl. Phys. 83 (5), 2484(1998).
[ 3 ] O. Velichko, V. Dobrushkin, L. Pakula, Mat Sci Eng B-solid 123 (2), 176 (2005).
[ 4 ] A. Richter, F. Werner, A. Cuevas, J. Schmidt, S.W. Glunz, Energy Procedia 27, 88 (2012).
[ 5 ] H. Jun Lee et al., Curr. Appl. Phys. 13, 1718 (2013).
[ 6 ] S. Graf, J. Junge, S. Seren, and G. Hahn, in Proceedings of 25th European Photovoltaic Solar Energy Conference, Valencia ( Spain) , 2010, p. 1770.
[ 7 ] Process Guidelines for Using Phosphorous Oxychloride as an N-Type Silicon Dopant. Air Products and Chemicals, http://www.airproducts.com/products/Chemicals/Specialty- Chemicals-Electronics/Doping.aspx, 2016 (accessed 13 03 16).
[ 8 ] Stull, Daniel R., Ind. Eng. Chem. 39 (4), 517 (1947).
[ 9 ] B.C. Chakravarty, P.N. Vinod, S.N. Singh, B.R. Chakraborty, Sol Energ Mat Sol C 73, 596 (2002).
[ 10 ] S. Wolf and R. N. Tauber, Silicon Processing for the VLSI, Volume 1: Process Technology (Lattice Press, Sunset Beach, California, 1987).

Submit A Manuscript
Review Manuscripts
Join As An Editorial Member
Most Views
Article
by Sergey M. Afonin
2916 Downloads 19244 Views
Article
by Syed Adil Hussain, Taha Hasan Associate Professor
2271 Downloads 15698 Views
Article
by Omprakash Sikhwal, Yashwant Vyas
2345 Downloads 14064 Views
Article
by Munmun Nath, Bijan Nath, Santanu Roy
2245 Downloads 13951 Views
Upcoming Conferences