*28.68% (29.87%)- New Limiting Highest Efficiencies obtained in \mathbf{n}^+(\mathbf{p}^+)-\mathbf{p}(\mathbf{n})\ Crystalline Silicon (Si) Junction Solar Cells at T=300 K, Due to The Effects of Heavy (Low) Doping and Impurity Size*

**DOI:**10.54647/physics14489 95 Downloads 4148 Views

**Author(s)**

**Abstract**

In the n^+(p^+)-p(n) crystalline Si-junction solar cells, by basing on a same treatment method, and for a same heavy (low) doping effect, as those given in our recent paper (RP) [1], but using now a new expression, obtained for the relative dielectric constant \varepsilon\left(r_{d\left(a\right)}\right), determined exactly in the effective Bohr model, as that given in Eq. (1c), representing the donor (acceptor) d(a)-radius r_{d\left(a\right)}-effect or the \varepsilon\left(r_{d\left(a\right)}\right)-effect, suggesting further that, for an increasing r_{d\left(a\right)}, \varepsilon\left(r_{d\left(a\right)}\right) decreases, as showed in Table 1, according to the increase in photovoltaic efficiency η, as observed in Tables 2 and 3, we finally get in our present paper, for highest values of r_{d\left(a\right)}, the new limiting highest efficiencies, η=28.68% (29.87%)<\eta_{RP}=31% (30.65%), being due to r_{d\left(a\right)}\ [8]

**Keywords**

donor (acceptor)-size effect; heavily doped emitter region; photovoltaic conversion factor; open circuit voltage; photovoltaic conversion efficiency

**Cite this paper**

H. Van Cong, K. C. Ho-Huynh Thi, R. Brouzet, P. Blaise, B. Zeghmati,
28.68% (29.87%)- New Limiting Highest Efficiencies obtained in \mathbf{n}^+(\mathbf{p}^+)-\mathbf{p}(\mathbf{n})\ Crystalline Silicon (Si) Junction Solar Cells at T=300 K, Due to The Effects of Heavy (Low) Doping and Impurity Size
, *SCIREA Journal of Physics*.
Volume 7, Issue 5, October 2022 | PP. 160-179.
10.54647/physics14489

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