*29.58% (31.26)% -Limiting Highest Efficiencies obtained in the \mathbf{n}^+(\mathbf{p}^+)-\mathbf{p}(\mathbf{n})\ Crystalline InP Junction Solar Cells at T=300 K, Due to The Effects of Heavy (Low) Doping and Impurity Size*

**DOI:**10.54647/physics14491 74 Downloads 4012 Views

**Author(s)**

**Abstract**

In the n^+(p^+)-p(n) crystalline InP-junction solar cells, by basing on a same treatment method, and for a same heavy (low) doping effect, as those investigate in our recent papers [1, 2], but using now a new expression, obtained for the static relative dielectric constant \varepsilon\left(r_{d\left(a\right)}\right), determined exactly in the effective Bohr model, as that given in Eq. (1c), representing the donor (acceptor) d(a)-radius r_{d\left(a\right)}-effect, or the \varepsilon\left(r_{d\left(a\right)}\right)-effect, suggesting further that, for an increasing r_{d\left(a\right)}, \varepsilon\left(r_{d\left(a\right)}\right) decreases, as showed in Table 1, according to the increase in photovoltaic efficiency η, as that observed in Tables 2 and 3, we finally get, in our present paper, for highest values of r_{d\left(a\right)}, the limiting highest efficiency results of such n^+(p^+)-p(n) crystalline InP-junction solar cells, η=29.58% (31.26%), respectively.Furthermore, one notes that our present value: η=31.26% can also be compared with the corresponding one, η=30.6%, investigated by Raj et al. [4], using a p-i-ZnO sample.

**Keywords**

donor (acceptor)-size effect; heavily doped emitter region; photovoltaic conversion factor; open circuit voltage; photovoltaic conversion efficiency

**Cite this paper**

H. Van Cong, K. C. Ho-Huynh Thi, C. T. Huynh-Pivet, A. Pivet, C. V. Huynh, A. L. Pivet, I. Pivet,
29.58% (31.26)% -Limiting Highest Efficiencies obtained in the \mathbf{n}^+(\mathbf{p}^+)-\mathbf{p}(\mathbf{n})\ Crystalline InP Junction Solar Cells at T=300 K, Due to The Effects of Heavy (Low) Doping and Impurity Size
, *SCIREA Journal of Physics*.
Volume 7, Issue 5, October 2022 | PP. 200-220.
10.54647/physics14491

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